Application of Electron Tomography for Semiconductor Device Analysis
نویسندگان
چکیده
منابع مشابه
Application of Electron Tomography for Semiconductor Device Analysis
The validity of electron tomography for imaging of high Z and low Z materials is evaluated using high aspect ratio VIAs and a DRAM as an example. The influence of the tiltrange on the 3D reconstruction is tested and it is shown that reliable 3D analysis is possible for up to 300 nm thick samples with a resolution of up to 1-2 nm.
متن کاملApplication of 3-D Transmission Electron Microscopy in Semiconductor Device Analysis
Based on the sample type, TEM imaging can be classified into cross-sectional TEM (XTEM) and planeview TEM (PTEM). The advantage of XTEM is that it shows stacked layer structures that reflect the manufacturing process steps. Plane-view TEM, on the other hand, is suitable for cases where either the exact defect location has not been isolated for XTEM or the anomaly has affected structures more la...
متن کاملTomography of Semiconductor Materials and Device Structures
The development of laser-assisted atom-probe tomography (APT) analysis and new sample preparation approaches have led to significant advances in the characterization of semiconductor materials and device structures by APT. The high chemical sensitivity and three-dimensional spatial resolution of APT makes it uniquely capable of addressing challenges resulting from the continued shrinking of sem...
متن کاملElectron Tomography of Au-Catalyzed Semiconductor Nanowires
Electron tomography based on Z-contrast scanning transmission electron microscopy (STEM) can be applied to study 3D morphology of nanomaterials at high resolution, that is, 1 nm in all three spatial dimensions, to provide comprehensive insights into the structure of nanomaterials and their interfaces. Here, we report the 3D characterization of Au-catalyzed Ge and Si nanowires using a full-space...
متن کاملapplication of upfc based on svpwm for power quality improvement
در سالهای اخیر،اختلالات کیفیت توان مهمترین موضوع می باشد که محققان زیادی را برای پیدا کردن راه حلی برای حل آن علاقه مند ساخته است.امروزه کیفیت توان در سیستم قدرت برای مراکز صنعتی،تجاری وکاربردهای بیمارستانی مسئله مهمی می باشد.مشکل ولتاژمثل شرایط افت ولتاژواضافه جریان ناشی از اتصال کوتاه مدار یا وقوع خطا در سیستم بیشتر مورد توجه می باشد. برای مطالعه افت ولتاژ واضافه جریان،محققان زیادی کار کرده ...
15 صفحه اولذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Microscopy and Microanalysis
سال: 2006
ISSN: 1431-9276,1435-8115
DOI: 10.1017/s1431927606065068